Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...
SemiQ Inc. has expanded its 1200 V Gen3 SiC MOSFET line with five SOT-227 power modules offering RDS(on) values of 7.4 mΩ, 14 ...
The study of Schottky barrier (SB) MOSFETs with metallic source and drain contacts is expanding as a result of recent developments in the semiconductor industry. Instead of the usual impurity-doped ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest [1] generation of silicon carbide ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
Thin-film lithium niobate (TFLN) is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties. Photodetectors are essential components for ...
The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
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