New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

Compared with existing NPT technology for IGBTs, SPT reduces on-state losses by 20% and switching losses by 20% - without increasing thermal resistance. When asked for their wish list for future ...

Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...

To meet growing demand for further downsizing and integration, Infineon Technologies AG has launched the 4.5-kV XHP 3 IGBT modules, targeting large conveyor belts, pumps, high-speed trains, ...

Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...

New York, March 14, 2023 (GLOBE NEWSWIRE) -- Reportlinker.com announces the release of the report "Insulated Gate Bipolar Transistor (IGBT) Global Market Report 2023 ...

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...

Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...

NTC temperature readout improves accuracy, increasing reliability and module utilization by up to 30 percent SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate ...

The global power electronics market accounts for $17.5 billion in 2019, with a 4.3% CAGR from 2019-2025, says Yole Developpement, of which IGBT modules represented $3.7 billion in 2019. The global ...

DOWSIL™ EG-4175 Silicone Gel is a protective solution, for next-generation insulated gate bipolar transistor (IGBT) modules, that withstands temperatures up to 180°C. This innovative gel from Dow ...

The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. October 16th, 2019 - By: Wolfspeed, a Cree Company With the shift ...