Infineon is sampling an IGBT package which can hold an IGBT up to 120A and a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3. Volume production is planned for Q1 2015.

A 48kW resonant converter includes four power modules, each containing two paralleled IGBTs and antiparallel diodes. They are arranged in a half-bridge or push-pull configuration depending on the ...

IGBT Trench 7 devices from Microchip offer power system designers a wide selection of current and voltage ranges, topologies, and package types. Promising increased power capability, reduced power ...

Power components are evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems. To provide system designers with a wide range of ...

Microchip Technology has extended its portfolio of IGBT 7 devices and now offers additional packages, multiple topologies, and current and voltage ranges. Featuring increased power capability, lower ...

Infineon has put a 650V silicon IGBT alongside a silicon carbide diode in the same TO-247 packages. “Due to a freewheeling SiC Schottky barrier diode, the CoolSiC Hybrid IGBTs perform with ...

Microchip's latest integrated IGBT-based devices feature improved packaging, lower on-state voltage, and other properties to address the needs of myriad power applications. The new IGBT 7 devices ...

ROHM has developed Hybrid IGBTs that come with an integrated 650V SiC Schottky barrier diode, the RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR). The devices are qualified under the ...