High-electron-mobility transistor (HEMT) devices based on gallium nitride (GaN) offer superior electrical characteristics and are a valid alternative to MOSFETs and IGBTs in high-voltage and ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics ...
High-efficiency GaN power integrated technology tailored for motor drives in white goods and factory automation Geneva, November 24, 2025 – STMicroelectronics (NYSE: STM), a global semiconductor ...
Motor control, particularly frequency-controlled drives, is a technology that has advanced quickly in recent years as a result of the widespread use of motors in a variety of applications and the ...
A pair of development kits, created by Qorvo and CGD, simplifies the development of GaN-based controller/driver systems for BLDC and PMSM motors. Cambridge GaN Devices and Qorvo have partnered to ...
EL SEGUNDO, CA, UNITED STATES, October 31, 2023 /EINPresswire.com/ -- EPC announces the availability of the EPC9194, a3-phase BLDC motor drive inverter reference ...
Premium Motor Drive Performance at Low Cost for e-bikes, Drones, and Robotics with GaN FETs from EPC
The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows ...
“Wide bandgap semiconductors such as GaN and SiC are being actively considered in various motor control applications for the power density and efficiency benefits they bring. CGD’s ICeGaN technology ...
STMicroelectronics’ new GaN ICs platform for motion control boosts appliance energy ratings High-efficiency GaN power integrated technology tailored for motor drives in white goods and factory ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback